Abstract

The investigation of nonlinear optical effects in guided wave devices is relevant for the development of high speed all-optical switches.1 In particular, studies of transient refractive index nonlinearities in the below-band-gap region of GaAs are important for establishing the speed limitations of optical switching in semiconductor devices. While previous studies of χ(3) have been performed using a variety of techniques such a four-wave mixing or interferometry, measurement of electronic nonlinearities was often complicated by the presence of parasitic thermal index changes.1

© 1989 Optical Society of America

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