Abstract

A staggered alignment configuration is produced for a GaAs/AIAs heterostructure, as shown in Fig. 1(a), when the GaAs layer is sufficiently thin that confinement raises the lowest Г derived state energy above the AIAs X derived conduction stats.1 Electrons quickly transfer to the AIAs layer2 while holes are trapped in the GaAs heavy hole valence band. Recombination of the separated carriers Is inhibited by both the reduced spatial overlap of the wave functions and momentum conservation requirements. Enhanced lifetimes for this indirect interwell decay, indicated by the II ‘ arrow in Fig. 1(a), relative to the normally observed intrawell type i or direct radiation also denoted in the figure, result. We observed type II exciton lifetimes approaching milliseconds.3

© 1989 Optical Society of America

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