Recently we reported1 the first high detectivity (D* = 1.0 × 1010 cm Hz1/2/W) GaAs/AIGaAs multiple quantum well detector sensitive in the long wavelength infrared (LWIR) band at 8.3 μm and operating at 77 K. As described, these novel LWIR detectors made from GaAs/AIGaAs quantum wells using the phenomenon of intersubband absorption have several potential advantages with respect to the usual LWIR detectors made from small bandgap materials such as HgCdTe.

© 1989 Optical Society of America

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