Abstract

Recently we reported1 the first high detectivity (D* = 1.0 × 1010 cm Hz1/2/W) GaAs/AIGaAs multiple quantum well detector sensitive in the long wavelength infrared (LWIR) band at 8.3 μm and operating at 77 K. As described, these novel LWIR detectors made from GaAs/AIGaAs quantum wells using the phenomenon of intersubband absorption have several potential advantages with respect to the usual LWIR detectors made from small bandgap materials such as HgCdTe.

© 1989 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription