Monolithic Integrated circuits utilizing the GaAs and Si material systems on the same substrate have generated much interest due to the ability to Integrate optoelectronics, microwave, and high speed digital functions. Diode lasers are currently being investigated as the light source in optoelectronic/eleotronic integrated circuits on Si substrates. Since the first report of lasing from a device fabricated directly on a Si substrate1 much progress has been reported. improvements in the quality of the GaAs/Si interface and the associated reduction in interface dislocations have lead to cw room temperature diode laser operation.2,3

© 1989 Optical Society of America

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