Abstract

The technology of growing GaAs on InP substrates is promising for the realization of optoelectronic integrated circuits (OEICs) since it enables the integration of photonic and electronic devices from two semiconductor groups, i.e., GaAs and InP based devices.1 GaAs/GaAIAs lasers grown on InP substrate are useful for OEIC applications such as the integration of multiple wavelength lasers for wavelength division multiplexing or integrating with InP detectors and GaAs electronic circuits for signal processing and conversion from long haul to local area communications.

© 1989 Optical Society of America

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