High quality GaAs quantum well lasers grown on InP substrates with two orientations by OMCVD

CONNIE J; CHANG-HASNAIN; Y. H. LO; R. BHAT; N. G. STOFFEL; D. M. HWANG

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1989),
paper FO5

High quality GaAs quantum well lasers grown on InP substrates with two orientations by OMCVD

CONNIE J, CHANG-HASNAIN, Y. H. LO, R. BHAT, N. G. STOFFEL, and D. M. HWANG

Conference on Lasers and Electro-Optics 1989

Baltimore, Maryland United States
24–28 April 1989
ISBN: 1-55752-086-0

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Low Threshold Diode Lasers and Novel Substrates (FO)

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C. J, CHANG-HASNAIN, Y. H. LO, R. BHAT, N. G. STOFFEL, and D. M. HWANG, "High quality GaAs quantum well lasers grown on InP substrates with two orientations by OMCVD," in Conference on Lasers and Electro-Optics, R. Bartolini, P. Liao, J. Bufton, and W. Krupke, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1989), paper FO5.

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Abstract

The technology of growing GaAs on InP substrates is promising for the realization of optoelectronic integrated circuits (OEICs) since it enables the integration of photonic and electronic devices from two semiconductor groups, i.e., GaAs and InP based devices.¹ GaAs/GaAIAs lasers grown on InP substrate are useful for OEIC applications such as the integration of multiple wavelength lasers for wavelength division multiplexing or integrating with InP detectors and GaAs electronic circuits for signal processing and conversion from long haul to local area communications.

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