Abstract

In the field of electronic materials there has been a persistent interest in the integration of high quality epitaxial thin film semiconductor layers with arbitrary crystalline or glass substrates. For example, thin film GaAs layers on crystalline silicon substrates would allow the combination of the two technologies. This has led to a massive effort on lattice mismatched heteropitaxial growth. Recently, however, a new and more flexible approach1 has been attracting increasing2 attention.

© 1989 Optical Society of America

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