Diode lasers and laser arrays having ultralow threshold current are essential components for a variety of applications requiring the integration of large numbers of optical and electronic elements on a common chip. The most promising candidates to date are real index guided quantum well (QW) lasers with narrow (≈1-μm) stripe widths. However, experimental low threshold devices typically involve complex processes which are either difficult to scale-up or demand extremely tight dimensional control. Recently, we demonstrated a comparatively simple technology for the fabrication of nearly planar low threshold QW lasers which is compatible with the strict process requirements for OEICs and optical computing applications.1 Here we report results on new device structures utilizing this technique.

© 1989 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription