Abstract
Laser-assisted chemical vapor deposition (CVD) has been given much attention. To understand and control the CVD processes, a detailed knowledge about the fundamental processes is required. This paper describes a diagnostics system to study the behavior of radicals in the gas phase processes by laser spectroscopic techniques. This system was used to determine the temporal and spatial density profiles of radicals relevant to carbon film deposition, such as GH, C2, CH3, and H. The diffusion coefficient of the C2 radical is first determined in such art environment as well as the reaction constant.
© 1989 Optical Society of America
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