Abstract

In recent years, much attention has been given to light driven processes to deposit semiconductor materials. The advantages of photodeposition include spatial selectivity and lower processing temperatures. In trying to achieve lower deposition temperatures using photochemical means, the objective is to take advantage of the optical absorption properties of either the reactant molecules, the substrate, or both. We have investigated the effectiveness of the ArF excimer laser and the HgXe arc lamp radiation in achieving these objectives.

© 1989 Optical Society of America

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