Abstract

We have produced a novel and practical laser processing scheme for maskless wiring of LSI interconnections, which is expected to have substantial impact on LSI development, it consists of contact-hole formation in a passivation layer by laser ablation and pulsed laser CVD metal line writing. The directly written interconnection allows large current flow (~102 mA) and has low contact resistance (≲1 Ω) and high reliability as proved by accelerated age testing.

© 1989 Optical Society of America

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