Abstract
Ultralow threshold surface emitting lasers1 may be useful for long range and chip to chip optical communications. The focus of many efforts Is to use quantum well structures and minimize the active material volume2 white maximizing the mirror reflectivities.3 All epitaxially grown Fabry-Perot resonators are suited for both of these purposes. Additionally it is desirable to have the substrate be transparent at the lasing wavelength. Here we demonstrate optically pumped surface-emitting lasing from MBE grown resonators containing lno.2- Ga0.8As/GaAs strained quantum wells active layers and GaAs/AlAs mirrors. The emission wavelength ranged from ~0.98 to 1.0 μm in the two samples grown and varied with position on the samples. The lasing threshold was 50 pJ on an estimated area of 30 μm2. Nonlinear optical switching at 1.06 μm with a 5:1 contrast was also achieved with a 20-pJ, 0.9-μm pump.
© 1989 Optical Society of America
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