Epitaxial surface-emitting lasers (ESELs)1-5 can be formed with two semiconductor multilayer mirrors surrounding an active region. The active region can have composition modulation with half- wavelength periodicity. This confers significant advantages over conventional edge-emitting lasers. By growing confining wells with halfwave periodicity, carriers can be confined in regions corresponding to maxima in the resonating wave.4,5 Thus the laser gain can be tailored layer by layer during growth, and the gain per unit length of lasing material can be increased.

© 1989 Optical Society of America

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