Abstract

Recently there has been a maturing of the technology of GaAs/AlGaAs multiple quantum well (MQW) p-i (MQW)-n modulators1–4 and related self electro-optic effect (SEED) devices5–7 grown on GaAs substrates by molecular beam epitaxy (MBE). It has been demonstrated that these devices can operate at several GHz3, and that with the incorporation of an MBE-grown dielectric mirror beneath the modulator they may operate in reflection mode,4 These properties make MQW modulators attractive as a device for communicating off chip via optical signals. Since the majority of electronic devices are silicon, it is important to determine the quality of GaAs MQW modulators grown on Si substrates.

© 1989 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription