Optically controlled GaAs dual-gate MESFET and permeable base transistors

R. N. Simons; K. B. Bhasin

doi:10.1364/CLEO.1986.WK39

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1986),
paper WK39
•https://doi.org/10.1364/CLEO.1986.WK39

Optically controlled GaAs dual-gate MESFET and permeable base transistors

R. N. Simons and K. B. Bhasin

Conference on Lasers and Electro-Optics 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-09-2

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Poster Session: 2 (WK)

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R. N. Simons and K. B. Bhasin, "Optically controlled GaAs dual-gate MESFET and permeable base transistors," in Conference on Lasers and Electro-Optics, G. Bjorklund, E. Hinkley, P. Moulton, and D. Pinnow, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper WK39.

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Abstract

Direct optical control of microwave/millimeter wave devices can provide faster switching, gain and phase adjustability in amplifiers, and frequency tuning or locking in oscillators.¹ Furthermore, it can reduce the complexity of a fiber-optic signal distribution network for a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC)-based phased array antennas for future space communication systems.

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