Abstract

In recent years there has been considerable Interest in development of nondestructive, noncontact, and high spatial resolution techniques to probe the properties of semiconductors, particularly Si, In particular, nonlinear optical techniques should prove valuable because of the tensorial nature of the processes. Whereas linear optical properties such as transmission and reflection are not sensitive to crystal structure, potentially more Information, e.g., crystal symmetry, is obtainable from nonlinear processes such as second and third harmonic generation since these are anisotropic with respect to the crystal axes.

© 1986 Optical Society of America