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Conferences > CLEO > 1986 > CPD > ThU9

An Ultrafast All Optical Gate With Subpicosecond On And Off Response Time.

A. Migus, D. Hulin, A. Mysyrowicz, A. Antonetti, W. T. Masselink, H. Morkoç, H. M. Gibbs, and N. Peyghambarian

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Abstract

Multiple quantum well structures (MQWS) of GaAs have been shown to exhibit very large optical nonlinearities when irradiated with light corresponding to the absorption region. Their physical origin is a bleaching of exciton absorption lines induced by photogenerated free carriers. These nonlinearities have been exploited to fabricate all-optical NOR gates with on-switching times of one picosecond1). However the switch-off time was markedly slower, in the nanosecond range, being limited by the recombination rate of the free carriers responsible for exciton screening.

© 1986 Optical Society of America

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