Abstract

It is becoming increasingly desirable to obtain real time measurements of signals at internal nodes in today's high-density, high-performance integrated circuits to verify a circuit design or pinpoint device faults. Here we address these needs with a new noninvasive laser probe which detects real time electrical signals in silicon integrated circuits. The probing system measures the change in the index of refraction in the silicon due to the intrinsic polarizability of free carriers.

© 1986 Optical Society of America