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Conferences > CLEO > 1986 > TUQ > TUQ1

Room-temperature cw operation of transverse-mode-stabilized 680-nm InGaAIP visible light laser diodes grown by MOCVD

Masayuki Ishikawa, Yasuo Ohba, Yukio Watanabe, Hideto Sugawara, and Motoyuki Yamamoto

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Abstract

Room-temperature cw operation of a transverse-mode-stabilized InGaP/lnGaAlP laser diode has been achieved for the first time. The laser diode has a self-aligned index-guided structure fabricated by a two-step metal-organic chemical vapor deposition (MOCVD) technique. The MOCVD growth was performed in a low-pressure vertical reactor using trimethylindium (TMI), trimethylgallium (TMG), trimethylaluminum (TMA), PH3, and AsH3 as source materials. Dimethyizinc (DMZ) and H2Se were used as p- and n-type dopant sources, respectively.

© 1986 Optical Society of America

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