Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Characterization of the growth parameters and purity of laser-deposited tungsten lines

Not Accessible

Your library or personal account may give you access

Abstract

Results are presented on the purity, morphology, and line shape of tungsten lines written by laser-assisted decomposition of W(CO)6 on SiO2-coated Si wafers. Scanning Auger measurements document the dramatic change in purity of the deposit on going from the photochemical to the photothermal regime (~50% impurity to a few percent, respectively) and largely confirm the recent results of Gilgen et al.1 and Oprysko and Beranek.2 The Auger results also indicate that, in all cases, metal was deposited outside the laser-irradiated area at a thickness and distance from the laser spot which depended strongly on the magnitude of the photochemical component. These wings of deposited material can spread hundreds of microns and have a metal content comparable with that of the central line itself. These wings present obvious limitations to most practical direct-write applications and are a potential source of error for the standard quality-of-deposit measurements based on calculated resistivity (i.e., if the contribution of the wings is not included as part of the true cross-sectional area). To control the growth of these wings and to determine the contributions of gaseous vs surface diffusional transport of material, the laser deposition was carried out with independent control of the substrate temperature and of the total or partial pressure (inert or reducing atmosphere) of the volatile precursor. In the photochemical regime the line shapes could be controlled by the total pressure, in agreement with the gas phase diffusional model. For the photo-thermal regime the wings were thin and narrow and could be attributed to limited thermal spreading. Preliminary results indicate that, for a given set of deposition parameters, the presence of hydrogen gas has little effect on the purity of the deposited material, while argon gas appears to increase the carbon content. (12min)

© 1986 Optical Society of America

PDF Article
More Like This
Effects of laser chemical vapor deposition parameters on a-Si:H film properties

H. Zarnani, Hulya Demiryont, and G. J. Collins
TUS5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986

Kinetic theory of laser photochemical deposition

C. Julian Chen
TUE1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986

Metal alloy film deposition by laser breakdown chemical vapor deposition

T. R. Jervis
TUS2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved