Abstract

Here we report on the electrical properties of laser-assisted chemical vapor deposited (CVD) aluminum oxynitride (AION) films on InP substrates for use as metal–insulator–semiconductor (MIS) diodes. From previous investigations, the major problems associated with InP MIS devices related to current drift phenomena and interfacial instabilities. These instabilities depend on surface preparation and surface damage induced during insulator deposition. Laser-assisted CVD may provide a less radiation damaging deposition technique, and thus InP MIS devices may be improved.

© 1986 Optical Society of America