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Conferences > CLEO > 1986 > THN > THN4

Picosecond electrooptic characterization of the permeable base transistor

D. R. Dykaar, G. A. Mourou, U. Rochester, M. A. Hollis, B. J. Clifton, K. B. Nichols, G. O. Bozler, and R. A. Murphy

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Abstract

The advent of ultrashort optical pulses used in conjunction with the electrooptic effect has made possible the temporal analysis of electrical phenomena on the picosecond and femtosecond time scale.1 This electrooptic technique is based on the colliding pulse mode-locked (CPM) laser which routinely produces pulses < 100-fs FWHM. Electrical signals with rise times as fast as a few hundred femtoseconds have been measured with the technique.2

© 1986 Optical Society of America

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