Abstract
There is a common desire to obtain large effective index changes Δη with small applied voltages for miniature efficient optical waveguide modulators and switches. It is also desirable to create such devices in GaAs or InGaAsP for compatibility with GaAs ICs and integrated optoelectronic devices. Most previous work in this area has used either the electrooptic effect in reverse biased PIN structures or the free carrier plasma effect in forward biased diodes. The first effect is too weak, leading to either long interaction lengths or high voltages, and for high-speed applications the second effect is too slow due to a dependence on carrier lifetime.
© 1986 Optical Society of America
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