Abstract
Very high-frequency direct modulation of AlGaAs and InGaAsP diode lasers has been reported.1,2 An intrinsic modulation bandwidth of 12.5 GHz of 1.3-μm InGaAsP vapor phase regrown buried hetero-structure lasers (VPR-BH) under pulse bias operation was demonstrated.2 A small-signal modulation bandwidth of a 15-GHz record is reported for the VPR-BH lasers operated at a pulse bias optical power of only 7.5 mW/facet.
© 1985 Optical Society of America
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