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AlGaAs/GaAs melt-etched inner-stripe laser diode with self-aligned structure

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Abstract

AlGaAs/GaAs laser diodes (LDs) lasing at ~780 nm (Ref. 1) have been widely used as light sources for information processing systems. A self-aligned LD structure seems suitable for such purposes, and it has been achieved by organometallic vapor phase epitaxy (OM-VPE).2 We present a novel fabrication technique of a self-aligned LD structure (Fig. 1) by liquid phase epitaxy (LPE). The present technique is based on the preferential rnelt-etching peculiar to the LPE, and the LD is called MEIS-LD (melt-etched inner stripe LD).

© 1985 Optical Society of America

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