Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Picosecond photocurrent transients in polycrystalline CdTe films prepared by UV-eahanced OMCVD

Not Accessible

Your library or personal account may give you access

Abstract

Picosecond photoconductive detectors utilizing thin films of amorphous1 and radiation-damaged2 semiconductors have been reported. Picosecond photoconductivity has been measured for the first time in 1800-Å thick films of polycrystalline GdTe grown by organometallic chemical vapor deposition (OMCVD) with a grain size of ~200-Å. High-speed photodetectors with sampling oscilloscope-limited response times of 35 psec (FWHM) and average drift mobilities, >11 cm2/V sec, have been made.

© 1985 Optical Society of America

PDF Article
More Like This
Picosecond Photoconductivity In Polycrystalline CdTe Films Prepared By UV Enhanced OMCVD

A. M. Johnson, D. W. Kisker, and W. M. Simpson
FB3 Picosecond Electronics and Optoelectronics (UEO) 1985

Picosecond recombination mechanisms in polycrystalline Si thin films

W. L. Nighan, Philippe M. Faughet, and N. M. Johnson
WK12 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986

UV Lasing in Semiconductor Polycrystalline Films

H. Cao, H. C. Ong, S. T. Ho, J. Y. Dai, Y. G. Zhao, X. Liu, J. Y. Wu, and R. P. H. Chang
QPD6 International Quantum Electronics Conference (IQEC) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.