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Conferences > CLEO > 1985 > TUK > TUK4

Two-dimensional E-field mapping and high-speed device characterization using the electrooptic sampling technique

K. E. MEYER, D. R. DYKAAR, G. A. MOUROU, and U. ROCHESTER

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Abstract

With the development of very high-speed GaAs devices, such as heterojunction bipolar transistors, MESFETs, TEGFETs, and MODFETs, with response well into the picosecond regime, comes the need for new instrumentation to directly characterize these devices. Requirements for such instrumentation include a temporal response of a few picoseconds, good spatial resolution, i.e., a few micrometers, and minimum interference with the circuit being tested.

© 1985 Optical Society of America

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