Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Two-dimensional array of improved GaIn-AsP/InP surface-emitting injection lasers

Not Accessible

Your library or personal account may give you access

Abstract

A conventional Injection laser consists of two cleaved or etched end mirrors perpendicular to the active layer, so that only 1-D laser arrays can be monolithically fabricated. On the other hand, since the surface emitting (SE) laser1 utilizes two surfaces of the epitaxial layers and the light output is taken vertically from the wafer, it is possible to prepare 2-D laser arrays. To do this with conventional stripe lasers, a special 45° mirror must be prepared2 when we want to achieve an emission vertical to the wafer. Recently, we demonstrated a GaInAsP/InP SE laser with a threshold current of 50 mA at 77 K under a pulsed condition,3 and the highest operating temperature was 188 K.4

© 1985 Optical Society of America

PDF Article
More Like This
Large Monolithic Two-Dimensional Arrays of GaInAsP/InP Surface-Emitting Lasers*

Z. L. Liau and J. N. Walpole
WA2 Semiconductor Lasers (ASLA) 1987

GaAlAs/GaAs Surface-Emitting Injection Laser

A. Ibaraki, S. Ishikawa, S. Ohkouchi, and K. Iga
MLL7 International Quantum Electronics Conference (IQEC) 1984

REFLECTIVITY DEPENDENCE OF THRESHOLD CURRENT IN GaInAsP/InP SURFACE EMITTING LASER

M. Oshikiri, H. Kawasaki, F. Koyama, and K. Iga
PD22 International Quantum Electronics Conference (IQEC) 1988

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved