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Electrorefraction and electroabsorption in InP and GaAs near the band gap

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Abstract

Franz-Keldysh electroabsorption has previously been measured1 and used to make electrooptic modulators.2 Here we report the first systematic measurement of the large change in refractive index associated with this electroabsorption. We have observed that this electrorefraction effect can be much larger than the Pockels effect in the same materials. Thus electrorefraction can be used to obtain more effective modulation in III—V semiconductors.

© 1985 Optical Society of America

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