Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Nonlinear optical studies and CO2 laser-induced melting of Zn-doped GaAs

Not Accessible

Your library or personal account may give you access

Abstract

The absorption of CO2 laser radiation (λ = 10.6 μm) in p-type GaAs is dominated by direct free-hole transitions between states in the heavy- and light-hole bands. For laser intensities of the order of 10 MW/cm2 (pulse duration at FWHM = 70 nsec), the absorption coefficient of lightly Zn-doped GaAs begins to decrease with increasing laser intensity. The nonlinear transmission is found to be reasonably well described by an inhomogeneously broadened two-level model, where the saturation intensity has a value of ~20 MW/cm2 for light with a wavelength of 10.6μm.

© 1985 Optical Society of America

PDF Article
More Like This
Zn doping of GaAs from the gas phase by laser-induced diffusion

P. Roentgen, H. Krautle, W. Roth, and H. Beneking
FD4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1984

AlGaAs/GaAs melt-etched inner-stripe laser diode with self-aligned structure

A. WATANABE, T. YAMADA, K. IMANAKA, H. HORIKAWA, Y. KAWAI, and M. SAKUTA
WB6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985

Instabilities during laser melting of semiconductors

J. Luscombe, J. Preston, J. E. Sipe, and H. M. Van Driel
WY1 OSA Annual Meeting (FIO) 1985

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved