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Laser-assisted chemical etching of SiO2

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Abstract

The ideal localized etching process should have sufficient spatial selectivity for the process of interest, exhibit rapid removal rates, and produce high-quality surfaces leaving only gaseous reaction products. Laser-assisted chemical etching (LACE) utilizes localized laser heating to drive a reaction between the gaseous ambient and the substrate surface which produces a net removal of substrate material. The laser wavelength is chosen so that the etchant gas is transparent and the substrate absorbs; and removal may occur either chemically and/or via a localized laser-generated reactive plasma.

© 1985 Optical Society of America

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