Abstract
Alloys of InGaAsP are of great importance for optical communication and related technologies. Knowledge of the carrier dynamics of these materials is important for understanding and improving existing devices and will become more crucial as integrated optoelectronic devices based on InGaAsP are developed. In this work, the dynamics of high- density photoexcited carriers in submicron InGaAsP films at 300 K are studied following ultrashort excitation at energies high above the band gap. Band-filling and a high-temperature carrier distribution produce gain at the pumping wavelength for times up to 2 psec after excitation.
© 1985 Optical Society of America
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