Abstract

High-mobility semiconductors including InP¹ and GaAs^1,2 offer several advantages for photorefractive image processing: (1) recording sensitivities comparable with those of oxide photorefractors such as LiNbO₃, BaTiO₃, and Bi₁₂SiO₂₀; (2) near-infrared responsivity, the spectral region of importance for semiconductor lasers, and optical communications; (3) high mobility allowing fast photorefractive responses ranging from nanoseconds to milliseconds; (4) optical and electrical properties that can be tailored by doping.

© 1985 Optical Society of America