Abstract
Within the last four years, a considerable amount of work has been devoted to the growth of device-worthy silicon-on-insulator (SOI) films. SOI is an attractive technology for realizing high-speed dense circuits. Three-dimensional integrated circuits are also attractive for applications such as intelligent transducers. Laser recrystallization of deposited polysilicon films is one of the major techniques available for producing such silicon films, and it is the only one which has been used to realize 3-D structures.
© 1985 Optical Society of America
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