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Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

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Abstract

The development of high-performance avalanche photodiodes (ADPs) is crucial if future high-bit-rate (>400-Mbit/sec) long-wavelength (1.0-μm ≤ λ ≤ 1.6-μm) lightwave systems are to achieve maximum transmission spans. We recently reported an avalanche photodiode shown schematically in Fig. 1 with separate absorption (InGaAs), grading (InGaAsP), and multiplication (InP) regions (SAGM- APD) which appears well suited for these future lightwave systems. These APDs exhibit high speed, low dark current, high quantum efficiency, and good avalanche gain. We report on the spatial uniformity of the gain of these SAGM-APDs. Homogeneous multiplication is important because localized areas with premature breakdown (e.g., microplasmas) can be sources of noise which ultimately degrade receiver performance.

© 1985 Optical Society of America

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