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Low-temperature growth of polycrystalline Si and Ge films by photolytic laser-induced CVD

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Abstract

Laser-induced chemical vapor deposition (LCVD) of thin films is initiated by the pyrolysis or photodissociation of a polyatomic molecule near a gas-substrate interface. Photolytic LCVD is based upon the photodecomposition of the molecule which minimizes heating of the substrate. Recently, photodissociation of organometallic molecules with either a UV laser1,2 or a lamp3 has been used to deposit a variety of metal films. Also Hanabusa et al.

© 1982 Optical Society of America

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