Use of band luminescence as a temperature probe tor laser-beam heating of GaAs

D. Kirillov; J. L. Merz

doi:10.1364/CLEO.1982.FQ3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1982),
paper FQ3
•https://doi.org/10.1364/CLEO.1982.FQ3

Use of band luminescence as a temperature probe tor laser-beam heating of GaAs

D. Kirillov and J. L. Merz

Conference on Lasers and Electro-Optics 1982

Phoenix, Arizona United States
14–16 April 1982
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Laser Annealing and Processing (FQ)

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D. Kirillov and J. L. Merz, "Use of band luminescence as a temperature probe tor laser-beam heating of GaAs," in Conference on Lasers and Electro-Optics, R. Abrams and A. Guenther, eds., OSA Technical Digest (Optica Publishing Group, 1982), paper FQ3.

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Abstract

The knowledge of the temperature reached in the irradiation region of a strongly absorbing semiconductor is important for laser annealing. Due to the small volume of the heated material, it is difficult to obtain precise temperature information; one must study the energy spectrum of the heated region, which may differ considerably from that of blackbody radiation.

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