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Mesa Waveguide GaAs/GaAlAs Injection Laser Grown by MO-CVD

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Abstract

We report a new mesa waveguide (MW) laser structure grown by atmospheric pressure metalorganic chemical vapor deposition (MO-CVD). This device operates single transverse and longitudinal mode up to CW output levels in excess of 20 mW. Threshold currents are 40-50 mA, and differential quantum efficiencies are ≈40-50%. The use of MO-CVD holds the promise of readily fabricating large numbers of virtually identical real refractive index-guided lasers on a single wafer.

© 1981 Optical Society of America

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