Abstract

Polysilicon films were deposited on dielectric layers of SiO₂, Si₃N₄ and a dual layer Si₃N₄/SiO₂ on silicon substrates. The polysilicon films were doped by either implanting with As or P or diffusion doped with phosphorous. The films were then laser annealed using a scanned cw argon laser. The resistivity of the polysilicon films decreases sharply at a threshold energy density that causes complete melting of the polysilicon. These characteristics are described in a comparison paper.¹ With a fixed laser power the polysilicon melt width is a function of the scan velocity.

© 1981 Optical Society of America