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Applications of laser annealing in silicon device fabrication

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Abstract

Currently there are several limitations to silicon device performance, integrated circuit packing density (minimum feature size), and circuit yield that are primarily due to semiconductor processing technology and procedures rather than to fundamental physics barriers. Laser irradiation of semiconductor materials can be used advantageously to overcome some of the problems inherent in conventional furnace processing methods. The capability to heat thin surface layers to high temperatures (including melting) for short time periods provides an important set of conditions which can often be employed advantageously, either to avoid an undesirable processing situation, or to create unique materials modifications which can lead to improved electrical properties and device configurations.

© 1981 Optical Society of America

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