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Continuous wave laser annealing of InP

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Abstract

There has been little investigation of the laser annealing of ion-implanted InP, which is one of the more promising candidates for microwave devices. To date, only high dose n-type implants have been reported to produce good electrical activation by both pulsed1 and cw laser2 anneal; however, the resulting mobilities are lower than achieved by conventional thermal anneal.

© 1981 Optical Society of America

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