Abstract

Recent results on the optimization of AlGaAs of very narrow (3-4-μm wide) shallow proton-implanted AlGaAs laser diodes are described. The devices for audio/video disk emit near 780 nm, those for optical communication and optical recording near 840 nm. Parameters of importance in the optimization are depth of implantation, p-type cladding doping level, and active layer thickness. All diodes have coated mirrors. Good mode stability and very high kink powers (50-100 MW) are obtained. The diodes are insensitive to optical feedback and, when used in optical communication systems, show very little modal noise.

© 1981 Optical Society of America