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GaAs/GaAlAs injection lasers grown by MOCVD

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Abstract

We report the fabrication of high-quality lasers grown by metal organic chemical vapor deposition (MOCVD) and study the effect of stripe width(s) on their properties. Specifically, shallow (1-μm deep) proton-bombarded lasers having successive adjacent 2-, 4-, 6-, and 8-μm wide stripes were tested. Because of the uniformity of the MOCVD-grown material and the presence of all four stripe widths as adjacent lasers in a linear array on a cleaved bar, a high degree of reliability in interpreting the results is obtained.

© 1981 Optical Society of America

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