Design of an Avalanche Photodiode with Low Edge Electric Field

Simin Qiu; Xiaofeng Duan; Gongqing Li; Kai Liu; Shiwei Cai; Yongqing Huang; Xiaomin Ren

Asia Communications and Photonics Conference (ACPC) 2019
OSA Technical Digest (Optica Publishing Group, 2019),
paper M4A.272

Design of an Avalanche Photodiode with Low Edge Electric Field

Simin Qiu, Xiaofeng Duan, Gongqing Li, Kai Liu, Shiwei Cai, Yongqing Huang, and Xiaomin Ren

Asia Communications and Photonics Conference 2019

Chengdu China
2–5 November 2019
ISBN: 978-1-943580-70-5

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Joint Poster Session (M4A)

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S. Qiu, X. Duan, G. Li, K. Liu, S. Cai, Y. Huang, and X. Ren, "Design of an Avalanche Photodiode with Low Edge Electric Field," in Asia Communications and Photonics Conference (ACPC) 2019, OSA Technical Digest (Optica Publishing Group, 2019), paper M4A.272.

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Abstract

An avalanche photodiode using a triple-mesa structure is proposed to eliminate edge breakdown and reduce dark current. It has a 3-dB bandwidth of 19 GHz and a dark current of 0.33 nA at M=3.

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