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InP-Based Photodetectors with Wide Spectral Range and Low Dark Current for Optical Interconnection

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Abstract

By introducing p+-InAlAs layer and InGaAsP intrinsic layer, an InP-based p-i-n photodetector with wide spectral range and low dark current is fabricated. The responsivity is 0.45A/W and 0.41A/W respectively at 850nm and 1550nm wavelengths.

© 2017 Optical Society of America

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