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Two-terminal Al0.1Ga0.9N/GaN based visible-blind avalanche phototransistors

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Abstract

Two-terminal GaN/Al0.1Ga0.9N based avalanche phototransistors have been fabricated and characterized. The devices exhibit peak responsivity at 335 nm and optical gain of 3.6×104 at 53.5 V, providing feasibility in realizing high-sensitive visible-blind detection.

© 2017 Optical Society of America

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