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Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates

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Abstract

We demonstrate a novel buried oxide grating structure formed by selectively-oxidized AlxGa1-xAs grown on nonplanar substrates using low-pressure MOCVD for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor distributed feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.

©2002 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. SEM cross-sectional views of four different sample each with four pairs of GaAs/AlGaAs. Darker regions are AlGaAs layers. Samples (a) and (b) have trenches along [01-1] directions but were grown at two different temperatures, 600°C for (a) and 640°C for (b). The thickness enhancement ratios between the sidewall and the planar region for samples (a), (b) and (d) are 2.20, 1.32 and 1.17, respectively. Sample (c) shows the convergence of two sidewalls. Sample (d) has the trench aligned along [011] direction. The no-growth plane (111)B is circled in (d) too. The nominal aluminum for all these samples is 0.92.
Fig. 2.
Fig. 2. Oxide front pattern of AlxGa1-xAs on nonplanar substrates with trenches aligned in the [01-1] direction. (a) A schematic shows the nonplanar substrate . (b) Oxide front pattern bright field image. (c) Oxide front pattern top view from the SEM with the backscattered detector.
Fig. 3.
Fig. 3. (a) Oxidation front shows saw-tooth patterns both for AlxGa1-xAs along [01-1] and [011] trenches. (b) The comparison of the grating period before and after oxidation. The top schematic shows the grating geometry. The bottom is the bright field image of the oxide front. Trenches are [01-1] direction.
Fig. 4.
Fig. 4. Schematics of the RCE photodetector and the epi-structure.
Fig. 5.
Fig. 5. Photocurrent responsivity spectrum versus injection light wavelength.
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